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Drive Current Enhancement of InGaZnO Thin-Film Transistors by Adoption of High-k Gate Dielectric Materials
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오새룬터 | - |
| dc.date.accessioned | 2024-01-11T06:34:06Z | - |
| dc.date.available | 2024-01-11T06:34:06Z | - |
| dc.date.issued | 20230823 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/117311 | - |
| dc.title | Drive Current Enhancement of InGaZnO Thin-Film Transistors by Adoption of High-k Gate Dielectric Materials | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Meeting on Information Display (IMID 2023) | - |
| dc.citation.conferencePlace | 부산 | - |
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