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Dissecting the Interplay between Organic Charge-Modulated Field-Effect Transistors and Field-Effect Transistors through Interface Control Engineering

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dc.contributor.authorHwang, Taehoon-
dc.contributor.authorPark, Eunyoung-
dc.contributor.authorSeo, Jungyoon-
dc.contributor.authorTsogbayar, Dashdendev-
dc.contributor.authorKo, Eun-
dc.contributor.authorYang, Chanwoo-
dc.contributor.authorAhn, Hyungju-
dc.contributor.authorLee, Dong Yun-
dc.contributor.authorLee, Hwa Sung-
dc.date.accessioned2024-01-20T09:02:43Z-
dc.date.available2024-01-20T09:02:43Z-
dc.date.issued2023-11-
dc.identifier.issn1944-8244-
dc.identifier.issn1944-8252-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/117835-
dc.description.abstractOrganic charge-modulated field-effect transistors (OCMFETs) have garnered significant interest as sensing platforms for diverse applications that include biomaterials and chemical sensors owing to their distinct operational principles. This study aims to improve the understanding of driving mechanisms in OCMFETs and optimize their device performance by investigating the correlation between organic field-effect transistors (OFETs) and OCMFETs. By introducing self-assembled monolayers (SAMs) with different functional groups on the AlO x gate dielectric surface, we explored the impact of the surface characteristics on the electrical behavior of both devices. Our results indicate that the dipole moment of the dielectric surface is a critical control variable in the performance correlation between OFET and OCMFET devices, as it directly impacts the generation of the induced floating gate voltage through the control gate voltage. The insights obtained from this study contribute to the understanding of the factors affecting OCMFET performance and emphasize their potential as platforms for diverse sensing systems.-
dc.format.extent11-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Chemical Society-
dc.titleDissecting the Interplay between Organic Charge-Modulated Field-Effect Transistors and Field-Effect Transistors through Interface Control Engineering-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1021/acsami.3c12105-
dc.identifier.scopusid2-s2.0-85178142207-
dc.identifier.wosid001108495900001-
dc.identifier.bibliographicCitationACS Applied Materials & Interfaces, v.15, no.46, pp 53765 - 53775-
dc.citation.titleACS Applied Materials & Interfaces-
dc.citation.volume15-
dc.citation.number46-
dc.citation.startPage53765-
dc.citation.endPage53775-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusTHRESHOLD VOLTAGE SHIFT-
dc.subject.keywordPlusEFFECT MOBILITY-
dc.subject.keywordPlusRECENT PROGRESS-
dc.subject.keywordPlusELECTRON-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusLENGTH-
dc.subject.keywordAuthororganic charge-modulated field-effect transistors-
dc.subject.keywordAuthorinterfacialengineering-
dc.subject.keywordAuthorsensing platform-
dc.subject.keywordAuthororganic field-effecttransistor-
dc.subject.keywordAuthordipole moment-
dc.identifier.urlhttps://pubs.acs.org/doi/10.1021/acsami.3c12105-
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ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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