Optimal phase shift and reflectance for high numerical aperture EUV phase shift mask
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, In-Hwa | - |
dc.contributor.author | Park, Jang-Gun | - |
dc.contributor.author | Kim, Min-Woo | - |
dc.contributor.author | Lee, Jun-Hyeong | - |
dc.contributor.author | Oh, Hye-Keun | - |
dc.date.accessioned | 2024-04-17T06:00:27Z | - |
dc.date.available | 2024-04-17T06:00:27Z | - |
dc.date.issued | 2021-10 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/118797 | - |
dc.description.abstract | As semiconductor technology became more integrated, the numerical aperture (NA) of extreme ultraviolet (EUV) exposure technology has increased from 0.33 to 0.55 to realize finer patterning. High NA EUVL aims to enable 8 nm half pitch resolution. As the NA increases and a smaller linewidth needs to be implemented, the mask 3D effects on patterning will become more severe. For mass production of EUV, it is essential to find an optimal absorber structure to alleviate serious problems such as mask 3D effects and shadowing effects. Among the various factors constituting the EUV photomask, phase shift and reflectance of the absorber are the most important factors that determine the image quality. Through computational simulation, the optimal structure was selected in consideration of phase shift and reflectance, and imaging performance and process latitude were calculated. © 2021 SPIE. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPIE | - |
dc.title | Optimal phase shift and reflectance for high numerical aperture EUV phase shift mask | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1117/12.2602035 | - |
dc.identifier.scopusid | 2-s2.0-85120456324 | - |
dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.11855, pp 1 - 9 | - |
dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.volume | 11855 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.docType | Conference paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Attenuated PSM | - |
dc.subject.keywordAuthor | Diffraction efficiency | - |
dc.subject.keywordAuthor | High NA mask | - |
dc.subject.keywordAuthor | High reflectance | - |
dc.subject.keywordAuthor | Imaging performance | - |
dc.subject.keywordAuthor | Mask 3D effect | - |
dc.subject.keywordAuthor | Phase shift | - |
dc.subject.keywordAuthor | Process latitude | - |
dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11855/2602035/Optimal-phase-shift-and-reflectance-for-high-numerical-aperture-EUV/10.1117/12.2602035.full#_=_ | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.