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Universal Method to Determine the Dynamic NBIS- and PBS-induced Instabilities on Self-aligned Coplanar InGaZnO Thin-film Transistors

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dc.contributor.authorJang, Jun Tae-
dc.contributor.authorYu, Hye Ri-
dc.contributor.authorAhn, Geumho-
dc.contributor.authorChoi, Sung-Jin-
dc.contributor.authorKim, Dong Myong-
dc.contributor.authorKim, Yong-Sung-
dc.contributor.authorOh, Saeroonter-
dc.contributor.authorBaeck, Ju Heyuck-
dc.contributor.authorBae, Jong Uk-
dc.contributor.authorPark, Kwon-Shik-
dc.contributor.authorYoon, Soo Young-
dc.contributor.authorKang, In Byeong-
dc.contributor.authorKim, Dae Hwan-
dc.date.accessioned2024-06-13T03:00:30Z-
dc.date.available2024-06-13T03:00:30Z-
dc.date.issued2018-05-
dc.identifier.issn0097-966X-
dc.identifier.issn2168-0159-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119430-
dc.description.abstractThe method for dynamically calculating the NBIS- and PBS- induced ΔVT's is proposed based on experimentally extracted density-of-states and is demonstrated in top-gate self-aligned coplanar amorphous InGaZnO thin-film transistors. The effect of illuminance as well as the bias-dependence is successfully taken into account. Proposed method is potentially useful for the instability-aware design of OLED display backplanes. © 2018 SID.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherJohn Wiley and Sons Inc-
dc.titleUniversal Method to Determine the Dynamic NBIS- and PBS-induced Instabilities on Self-aligned Coplanar InGaZnO Thin-film Transistors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1002/SDTP.12538-
dc.identifier.scopusid2-s2.0-85085262500-
dc.identifier.bibliographicCitationDigest of Technical Papers - SID International Symposium, v.49, no.1, pp 232 - 235-
dc.citation.titleDigest of Technical Papers - SID International Symposium-
dc.citation.volume49-
dc.citation.number1-
dc.citation.startPage232-
dc.citation.endPage235-
dc.type.docTypeConference paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthoramorphous InGaZnO thin-film transistors-
dc.subject.keywordAuthordynamic NBIS- and PBS-induced instabilities-
dc.subject.keywordAuthortop-gate self-aligned coplanar structure-
dc.identifier.urlhttps://sid.onlinelibrary.wiley.com/doi/abs/10.1002%2FSDTP.12538-
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