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Enhancing Non-Volatile Memory Performance: Dual Ferroelectric Gate Field-Effect Transistors with Recessed Channel Geometry
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김영현 | - |
| dc.date.accessioned | 2024-06-30T06:02:00Z | - |
| dc.date.available | 2024-06-30T06:02:00Z | - |
| dc.date.issued | 2024-06-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119678 | - |
| dc.title | Enhancing Non-Volatile Memory Performance: Dual Ferroelectric Gate Field-Effect Transistors with Recessed Channel Geometry | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 경주컨벤션센터 | - |
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Related Researcher
- Kim, Young hyun
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)