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Fabrication of a Ferroelectric Amorphous Oxide Semiconductor FET with Low Temperature Hf-Based Ferroelectric for Emerging Memory Applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김영현 | - |
| dc.date.accessioned | 2024-06-30T06:30:28Z | - |
| dc.date.available | 2024-06-30T06:30:28Z | - |
| dc.date.issued | 2023-08-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119693 | - |
| dc.title | Fabrication of a Ferroelectric Amorphous Oxide Semiconductor FET with Low Temperature Hf-Based Ferroelectric for Emerging Memory Applications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | IMID2023 | - |
| dc.citation.conferencePlace | BEXCO | - |
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Related Researcher
- Kim, Young hyun
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)