Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

A High-Reliability Carry-Free Gate Driver for Flexible Displays Using a-IGZO TFTs

Full metadata record
DC Field Value Language
dc.contributor.authorKim, Jong-Seok-
dc.contributor.authorByun, Jung-Woo-
dc.contributor.authorJang, Jun-Hwan-
dc.contributor.authorKim, Yong-Duck-
dc.contributor.authorHan, Ki-Lim-
dc.contributor.authorPark, Jin-Seong-
dc.contributor.authorChoi, Byong-Deok-
dc.date.accessioned2024-07-16T12:33:14Z-
dc.date.available2024-07-16T12:33:14Z-
dc.date.issued2018-08-
dc.identifier.issn0018-9383-
dc.identifier.issn1557-9646-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119970-
dc.description.abstractMost thin-film transistor (TFT) gate drivers integrated on the display panel use the carry signals between the stages. In our previous works, we found that these carry-type gate drivers are subject to the reliability problem in a flexible display, since the errors of the stressed stages are accumulated through the carry signals. This problem possibly leads to the failure of image refresh of the display device. Therefore, the carry-free gate driver can resolve the error accumulation problem since it does not use the carry signals and instead, each unit stage operates independently. In this paper, we propose an advanced carry-free gate driver circuit to remove the drawbacks of the previous version, while keeping the advantages. More importantly, this paper is the first report to experimentally show that the error accumulation phenomenon of the carry-type gate driver and the problem is removed in the carry-free gate driver. The proposed carry-free gate driver and the carry-type gate driver are fabricated with amorphous indium-gallium-zinc-oxide TFTs on a flexible substrate for comparison purpose. The proposed gate driver shows a very high reliability since no voltage fluctuation occurs at the outputs after 10 000 cycles bending test with 2-mm bending radius.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA High-Reliability Carry-Free Gate Driver for Flexible Displays Using a-IGZO TFTs-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TED.2018.2843180-
dc.identifier.scopusid2-s2.0-85048878519-
dc.identifier.wosid000439649900027-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.8, pp 3269 - 3276-
dc.citation.titleIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.citation.volume65-
dc.citation.number8-
dc.citation.startPage3269-
dc.citation.endPage3276-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusACTIVE-MATRIX DISPLAYS-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusHIGH-RESOLUTION-
dc.subject.keywordPlusIZO TFTS-
dc.subject.keywordPlusSHIFT REGISTER-
dc.subject.keywordPlusAMOLED DISPLAY-
dc.subject.keywordAuthorAmorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT)-
dc.subject.keywordAuthorcarry-free gate driver-
dc.subject.keywordAuthordecoder-
dc.subject.keywordAuthorgate driver-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8388719-
Files in This Item
Go to Link
Appears in
Collections
COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kim, Jong Seok photo

Kim, Jong Seok
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE