One-volt oxide based complementary circuit
DC Field | Value | Language |
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dc.contributor.author | Wang, Junjie | - |
dc.contributor.author | Lin, Xiaoyu | - |
dc.contributor.author | Li, Yuxiang | - |
dc.contributor.author | Xin, Qian | - |
dc.contributor.author | Song, Aimin | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.contributor.author | Jin, Jidong | - |
dc.contributor.author | Zhang, Jiawei | - |
dc.date.accessioned | 2024-07-18T05:00:28Z | - |
dc.date.available | 2024-07-18T05:00:28Z | - |
dc.date.issued | 2024-07 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/120038 | - |
dc.description.abstract | In low-power electronics, there is a substantial demand for high-performance p-type oxide thin-film transistors (TFTs) that are capable of efficient operation at low voltages. In this study, we employ anodization to form an aluminum oxide gate dielectric layer, enabling the fabrication of p-type tin oxide (SnO) TFTs that effectively operate at a low voltage of 1 V. Under optimal device fabrication conditions, the SnO TFT demonstrates an on/off current ratio exceeding 103 and a saturation mobility of 1.94 cm2 V−1 s−1 at 1 V operation. The optimal SnO TFT fabrication conditions are subsequently used to fabricate a complementary inverter, comprising a SnO TFT and an n-type indium gallium zinc oxide TFT, achieving a gain of up to 38 at a 1 V supply voltage. Notably, the inverter’s switching point voltage is finely tuned to the ideal value, precisely half of the supply voltage. This oxide-based complementary inverter showcases promising potential in low-power electronics. © 2024 Author(s). | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | American Institute of Physics | - |
dc.title | One-volt oxide based complementary circuit | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1063/5.0215815 | - |
dc.identifier.scopusid | 2-s2.0-85197475737 | - |
dc.identifier.wosid | 001262290100008 | - |
dc.identifier.bibliographicCitation | AIP Advances, v.14, no.7, pp 1 - 6 | - |
dc.citation.title | AIP Advances | - |
dc.citation.volume | 14 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.identifier.url | https://pubs.aip.org/aip/adv/article/14/7/075205/3300732/One-volt-oxide-based-complementary-circuit | - |
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