High electron mobility of beta-HgS colloidal quantum dots with doubly occupied quantum states
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jaekyun | - |
dc.contributor.author | Yoon, Bitna | - |
dc.contributor.author | Kim, Jaehyun | - |
dc.contributor.author | Choi, Yunchang | - |
dc.contributor.author | Kwon, Young-Wan | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.contributor.author | Jeong, Kwang Seob | - |
dc.date.accessioned | 2021-06-22T15:41:46Z | - |
dc.date.available | 2021-06-22T15:41:46Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/12049 | - |
dc.description.abstract | Electron occupation of the lowest electronic state of the conduction band (1S(e)) of a semiconducting nanocrystal offers numerous opportunities to efficiently utilize the quantization of the colloidal quantum dot. The steady-state electron occupation of the 1S(e) gives rise to unprecedented electrical, optical, and magnetic properties. We report an electron mobility of similar to 1.29 cm(2) V-1 s(-1) measured in a mercury sulfide (beta-HgS) quantum dot field effect transistor (FET), demonstrating the best carrier mobility for the HgS colloidal nanocrystal solid. The high electron mobility of the HgS nanocrystals with the doubly occupied quantum state originates from the efficient ligand exchange from oleylamine to thiocyanate, better carrier hopping via shortened inter-dot-distance, and the packing of nanocrystals by optimized thermal annealing conditions. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | High electron mobility of beta-HgS colloidal quantum dots with doubly occupied quantum states | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jaekyun | - |
dc.identifier.doi | 10.1039/c7ra07193k | - |
dc.identifier.scopusid | 2-s2.0-85027237121 | - |
dc.identifier.wosid | 000407442000007 | - |
dc.identifier.bibliographicCitation | RSC Advances, v.7, no.61, pp.38166 - 38170 | - |
dc.relation.isPartOf | RSC Advances | - |
dc.citation.title | RSC Advances | - |
dc.citation.volume | 7 | - |
dc.citation.number | 61 | - |
dc.citation.startPage | 38166 | - |
dc.citation.endPage | 38170 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | NANOCRYSTAL SOLIDS | - |
dc.subject.keywordPlus | RELAXATION | - |
dc.subject.keywordPlus | LIGANDS | - |
dc.subject.keywordPlus | FILMS | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2017/RA/C7RA07193K | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.