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A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density

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dc.contributor.authorCho, Wanik-
dc.contributor.authorJung, Jongseok-
dc.contributor.authorKim, Jongwoo-
dc.contributor.authorHam, Junghoon-
dc.contributor.authorLee, Sangkyu-
dc.contributor.authorNoh, Yujong-
dc.contributor.authorKim, Dauni-
dc.contributor.authorLee, Wanseob-
dc.contributor.authorCho, Kayoung-
dc.contributor.authorKim, Kwanho-
dc.contributor.authorLee, Heejoo-
dc.contributor.authorChai, Sooyeol-
dc.contributor.authorJo, Eunwoo-
dc.contributor.authorCho, Hanna-
dc.contributor.authorKim, Jong Seok-
dc.contributor.authorKwon, Chankeun-
dc.contributor.authorPark, Cheolioona-
dc.contributor.authorNam, Hveonsu-
dc.contributor.authorWon, Haeun-
dc.contributor.authorKim, Taeho-
dc.contributor.authorPark, Kyeonghwan-
dc.contributor.authorOh, Sanghoon-
dc.contributor.authorBan, Jinhyun-
dc.contributor.authorPark, Junyoung-
dc.contributor.authorShin, Jaehyeon-
dc.contributor.authorShin, Taisik-
dc.contributor.authorJang, Junseo-
dc.contributor.authorMun, Jiseong-
dc.contributor.authorChoi, Jehyun-
dc.contributor.authorChoi, Hyunseung-
dc.contributor.authorChoi, Suna-Wook-
dc.contributor.authorPark, Wonsun-
dc.contributor.authorYoon, Dongkvu-
dc.contributor.authorKim, Minsu-
dc.contributor.authorLim, Junvoun-
dc.contributor.authorAn, Chiwook-
dc.contributor.authorShirr, Hyunyoung-
dc.contributor.authorOh, Haesoon-
dc.contributor.authorPark, Haechan-
dc.contributor.authorShim, Sungbo-
dc.contributor.authorHuh, Hwang-
dc.contributor.authorChoi, Honasok-
dc.contributor.authorLee, Seungpil-
dc.contributor.authorSim, Jaesuna-
dc.contributor.authorGwon, Kichana-
dc.contributor.authorKim, Jumsoo-
dc.contributor.authorJeong, Woopyo-
dc.contributor.authorChoi, Jungdal-
dc.contributor.authorJin, Kyo-Won-
dc.date.accessioned2025-04-01T06:32:01Z-
dc.date.available2025-04-01T06:32:01Z-
dc.date.issued2022-02-20-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/122661-
dc.titleA 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density-
dc.typeConference-
dc.identifier.doi10.1109/isscc42614.2022.9731785-
dc.citation.title2022 IEEE International Solid- State Circuits Conference (ISSCC)-
dc.citation.conferenceName2022 IEEE International Solid- State Circuits Conference (ISSCC)-
dc.citation.conferencePlace미국-
dc.citation.conferencePlaceSan Francisco, CA, USA-
dc.citation.conferenceDate2022-02-20 ~ 2022-02-26-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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