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Strained-layer quantum well materials grown by MOCVD for diode laser application
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김홍혁 | - |
| dc.date.accessioned | 2025-04-23T03:00:25Z | - |
| dc.date.available | 2025-04-23T03:00:25Z | - |
| dc.date.issued | 2021-01 | - |
| dc.identifier.issn | 0079-6727 | - |
| dc.identifier.issn | 1873-1627 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/125104 | - |
| dc.description.abstract | 초록없음 | - |
| dc.format.extent | 30 | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.title | Strained-layer quantum well materials grown by MOCVD for diode laser application | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1016/j.pquantelec.2020.100303 | - |
| dc.identifier.scopusid | 2-s2.0-85096166734 | - |
| dc.identifier.bibliographicCitation | PROGRESS IN QUANTUM ELECTRONICS, v.75, pp 1 - 30 | - |
| dc.citation.title | PROGRESS IN QUANTUM ELECTRONICS | - |
| dc.citation.volume | 75 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 30 | - |
| dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | EngineeringPhysicsOptics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & ElectronicQuantum Science & TechnologyOpticsPhysics, Applied | - |
| dc.subject.keywordPlus | THRESHOLD-CURRENT-DENSITYCONTINUOUS-WAVE-OPERATIONDISTRIBUTED-FEEDBACK LASERSMOLECULAR-BEAM EPITAXYHIGH-POWER OPERATIONVAPOR-PHASE EPITAXYHIGH-PERFORMANCEBAND-GAPEMISSION WAVELENGTHHIGH-EFFICIENCY | - |
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Related Researcher
- Kim, Honghyuk
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)