Enhanced plasma corrosion resistance of Y2O3/Al2O3/Al multilayer substrate for fluorine functional interfaces

Abstract

Plasma-enhanced chemical vapor deposition (PECVD) is essential in semiconductor manufacturing but suffers from material degradation due to plasma exposure. This study presents a novel Al2O3-Y2O3 multilayer coating fabricated via anodization and atomic layer deposition (ALD) to enhance plasma resistance and mechanical durability. Unlike conventional Al2O3 coatings, our approach significantly reduces etching rates by forming yttrium fluoride (YF3) and yttrium oxyfluoride (YOF) passivation layers, providing superior corrosion resistance. Furthermore, nanoindentation analysis confirms a 2.09-fold increase in hardness compared to Al2O3, mitigating Y2O3's inherent brittleness. These results demonstrate a highly durable, scalable coating strategy for improving the longevity of PECVD components in semiconductor fabrication. © 2025 Elsevier Ltd and Techna Group S.r.l.