Buried Contouring PTCDI-C13 Layer for Interface Engineering in Dual-Function Optical Synaptic and Memory Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Yeo Eun | - |
dc.contributor.author | Kang, Seungme | - |
dc.contributor.author | Kim, Hyeonjung | - |
dc.contributor.author | Kim, Young-Joon | - |
dc.contributor.author | Oh, Seyong | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2025-10-17T07:30:29Z | - |
dc.date.available | 2025-10-17T07:30:29Z | - |
dc.date.issued | 2025-09 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/126691 | - |
dc.description.abstract | We present a heterojunction based on the n-type organic semiconductor N,N '-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C-13) with a PTCDI-C-13/parylene/PTCDI-C-13-layered structure, enabling dual functionality as both an optical synaptic and a memory transistor. The device exploits a buried contouring PTCDI-C-13 layer, where the lower PTCDI-C-13 and intervening parylene layers serve distinct functions in charge trapping and modulation. In memory mode, the buried PTCDI-C-13 serves as a floating gate, while the parylene layer acts as a tunneling barrier, facilitating charge storage and controlled electron tunneling under combined optical and electrical stimulations. In synaptic mode, the thickness of the buried PTCDI-C-13 dictates the surface roughness, which is transferred to the parylene layer, forming a textured interface with abundant charge trap sites that modulate the synaptic behavior. By tuning the PTCDI-C-13 thickness, we controlled the interface roughness and trap density (n t), achieving optimal performance at 82 nm. The device successfully emulated synaptic plasticity and demonstrated transitions to long-term memory. To further verify its neuromorphic capabilities, our device achieved a recognition accuracy of 91.7% in a Modified National Institute of Standards and Technology-based classification simulation, successfully replicating biological synaptic behavior. Additionally, an electrocardiogram-based simulation demonstrated high classification accuracy while effectively processing dynamic, time-dependent signals. By reliably performing both static image recognition and dynamic biosignal processing, our device showcases its potential for real-time biomedical diagnostics, adaptive AI, and bioinspired computing applications. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Buried Contouring PTCDI-C13 Layer for Interface Engineering in Dual-Function Optical Synaptic and Memory Transistors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsami.5c14502 | - |
dc.identifier.wosid | 001575004300001 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.type.docType | Article; Early Access | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ORGANIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | optical synaptic | - |
dc.subject.keywordAuthor | memory transistor | - |
dc.subject.keywordAuthor | PTCDI-C-13 | - |
dc.subject.keywordAuthor | neuromorphic computing | - |
dc.subject.keywordAuthor | dual-function | - |
dc.subject.keywordAuthor | surface roughness | - |
dc.subject.keywordAuthor | contour layer | - |
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