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Buried Contouring PTCDI-C13 Layer for Interface Engineering in Dual-Function Optical Synaptic and Memory Transistors

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dc.contributor.authorKim, Yeo Eun-
dc.contributor.authorKang, Seungme-
dc.contributor.authorKim, Hyeonjung-
dc.contributor.authorKim, Young-Joon-
dc.contributor.authorOh, Seyong-
dc.contributor.authorYoo, Hocheon-
dc.date.accessioned2025-10-17T07:30:29Z-
dc.date.available2025-10-17T07:30:29Z-
dc.date.issued2025-09-
dc.identifier.issn1944-8244-
dc.identifier.issn1944-8252-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/126691-
dc.description.abstractWe present a heterojunction based on the n-type organic semiconductor N,N '-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C-13) with a PTCDI-C-13/parylene/PTCDI-C-13-layered structure, enabling dual functionality as both an optical synaptic and a memory transistor. The device exploits a buried contouring PTCDI-C-13 layer, where the lower PTCDI-C-13 and intervening parylene layers serve distinct functions in charge trapping and modulation. In memory mode, the buried PTCDI-C-13 serves as a floating gate, while the parylene layer acts as a tunneling barrier, facilitating charge storage and controlled electron tunneling under combined optical and electrical stimulations. In synaptic mode, the thickness of the buried PTCDI-C-13 dictates the surface roughness, which is transferred to the parylene layer, forming a textured interface with abundant charge trap sites that modulate the synaptic behavior. By tuning the PTCDI-C-13 thickness, we controlled the interface roughness and trap density (n t), achieving optimal performance at 82 nm. The device successfully emulated synaptic plasticity and demonstrated transitions to long-term memory. To further verify its neuromorphic capabilities, our device achieved a recognition accuracy of 91.7% in a Modified National Institute of Standards and Technology-based classification simulation, successfully replicating biological synaptic behavior. Additionally, an electrocardiogram-based simulation demonstrated high classification accuracy while effectively processing dynamic, time-dependent signals. By reliably performing both static image recognition and dynamic biosignal processing, our device showcases its potential for real-time biomedical diagnostics, adaptive AI, and bioinspired computing applications.-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER CHEMICAL SOC-
dc.titleBuried Contouring PTCDI-C13 Layer for Interface Engineering in Dual-Function Optical Synaptic and Memory Transistors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1021/acsami.5c14502-
dc.identifier.wosid001575004300001-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.type.docTypeArticle; Early Access-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusORGANIC SEMICONDUCTORS-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordAuthoroptical synaptic-
dc.subject.keywordAuthormemory transistor-
dc.subject.keywordAuthorPTCDI-C-13-
dc.subject.keywordAuthorneuromorphic computing-
dc.subject.keywordAuthordual-function-
dc.subject.keywordAuthorsurface roughness-
dc.subject.keywordAuthorcontour layer-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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