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Electrical properties of H2O2 surface treated unintentionally doped GaN films on Si(111) grown by plasma assisted molecular beam epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-22T16:10:52Z | - |
| dc.date.available | 2021-06-22T16:10:52Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2015-12-15 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/12989 | - |
| dc.publisher | The Korean Federation of Science and Technology Societies | - |
| dc.title | Electrical properties of H2O2 surface treated unintentionally doped GaN films on Si(111) grown by plasma assisted molecular beam epitaxy | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | The 9th International Conference on Advanced Materials and Devices | - |
| dc.relation.isPartOf | The 9th International Conference on Advanced Materials and Devices | - |
| dc.citation.title | The 9th International Conference on Advanced Materials and Devices | - |
| dc.citation.conferencePlace | Ramada Plaza Zeju Hotel, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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