Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Woojin | - |
dc.contributor.author | Fukazawa, Atsuki | - |
dc.contributor.author | Choa, Yong-Ho | - |
dc.date.accessioned | 2021-06-22T16:22:31Z | - |
dc.date.available | 2021-06-22T16:22:31Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2016-09 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13080 | - |
dc.description.abstract | The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, (CH3)(2)Si(OCH3)(2), and CxHyOz by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of sub-micrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 한국재료학회 | - |
dc.title | Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choa, Yong-Ho | - |
dc.identifier.doi | 10.3740/MRSK.2016.26.9.455 | - |
dc.identifier.scopusid | 2-s2.0-84997542857 | - |
dc.identifier.bibliographicCitation | Korean Journal of Materials Research, v.26, no.9, pp.455 - 459 | - |
dc.relation.isPartOf | Korean Journal of Materials Research | - |
dc.citation.title | Korean Journal of Materials Research | - |
dc.citation.volume | 26 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 455 | - |
dc.citation.endPage | 459 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002146243 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordAuthor | gap fill | - |
dc.subject.keywordAuthor | f-cvd | - |
dc.subject.keywordAuthor | low-k | - |
dc.subject.keywordAuthor | trench pattern | - |
dc.subject.keywordAuthor | microelectronic | - |
dc.identifier.url | http://journal.mrs-k.or.kr/journal/article.php?code=44609 | - |
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