Polymer-assisted solution processing of Mo-doped indium oxide thin films: high-mobility and carrier-scattering mechanisms
DC Field | Value | Language |
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dc.contributor.author | Vishwanath, Sujaya Kumar | - |
dc.contributor.author | Cho, Kuk Young | - |
dc.contributor.author | Kim, Jihoon | - |
dc.date.accessioned | 2021-06-22T17:02:08Z | - |
dc.date.available | 2021-06-22T17:02:08Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14052 | - |
dc.description.abstract | Mo-doped indium oxide (MIO) transparent conducting films have been prepared by a polymer-assisted solution (PAS) process. Both Mo-and In-PASs have been formulated by coordinating Mo-and In-anionic complexes with polyethyleneimine. The final MIO-PAS coating solution was prepared by adding Mo-PAS and In-PAS with Mo concentration in solution ranging from 0 at% to 2.5 at%. The structural, optical and electrical properties of MIO films spin-coated on the glass substrates were characterized. The optimum Mo concentration leading to the best electrical and optical properties was 1.5 at%, showing a low resistivity of 3.9 x 10(-3) Omega . cm with high mobility of 43 cm(2) V-1 s(-1) and high transmittance from visible to near infrared regions. The carrier-transport mechanism in the PAS-processed MIO film was investigated by applying a theoretical scattering model (Brook-Herring-Dingle theory) to Hall mobility data. The scattering model confirms that the ionized and neutral impurities play important roles as dominant scattering centers in the PAS-processed MIO films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Polymer-assisted solution processing of Mo-doped indium oxide thin films: high-mobility and carrier-scattering mechanisms | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Kuk Young | - |
dc.identifier.doi | 10.1088/0022-3727/49/15/155501 | - |
dc.identifier.scopusid | 2-s2.0-84962318087 | - |
dc.identifier.wosid | 000373620600021 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.15, pp.1 - 7 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | IN2O3 FILMS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ITO | - |
dc.subject.keywordAuthor | polymer assisted solution process | - |
dc.subject.keywordAuthor | Mo-doped indium oxide | - |
dc.subject.keywordAuthor | transparent conducting oxide | - |
dc.subject.keywordAuthor | high carrier mobility | - |
dc.subject.keywordAuthor | scattering mechanism | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0022-3727/49/15/155501 | - |
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