Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (vol 108, 141604, 2016)

Oh, Saeroonter; Baeck, Ju Heyuck; Bae, Jong Uk; Park, Kwon-Shik; Kang, In Byeong

doi:10.1063/1.4947573

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Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (vol 108, 141604, 2016)

Authors: Oh, Saeroonter; Baeck, Ju Heyuck; Bae, Jong Uk; Park, Kwon-Shik; Kang, In Byeong

Issue Date: Apr-2016

Publisher: AMER INST PHYSICS

Citation: APPLIED PHYSICS LETTERS, v.108, no.16, pp 1 - 1

Pages: 1

Indexed: SCI
SCIE
SCOPUS

Journal Title: APPLIED PHYSICS LETTERS

Volume: 108

Number: 16

Start Page: 1

End Page: 1

URI: https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14055

DOI: 10.1063/1.4947573

ISSN: 0003-6951
1077-3118

Abstract: This article was originally published online on 8 April 2016. Due to a production error, co-author In Byeong Kang's affiliation was listed incorrectly. AIP Publishing apologizes for this error. The affiliation appear correctly above. All online versions of the article were corrected on 11 April 2016, and it appears correctly in print.

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Appears in Collections: COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles

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