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Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (vol 108, 141604, 2016)
- Issue Date
- Apr-2016
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.108, no.16, pp.1 - 1
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 108
- Number
- 16
- Start Page
- 1
- End Page
- 1
- ISSN
- 0003-6951
- Abstract
- This article was originally published online on 8 April 2016. Due to a production error, co-author In Byeong Kang's affiliation was listed incorrectly. AIP Publishing apologizes for this error. The affiliation appear correctly above. All online versions of the article were corrected on 11 April 2016, and it appears correctly in print.
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Related Researcher
- OH, SAE ROON TER
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)