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Efficient Pre-Bond Testing of TSV Defects Based on IEEE std. 1500 Wrapper Cells

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dc.contributor.authorJung, Jihun-
dc.contributor.authorAnsari, Muhammad Adil-
dc.contributor.authorKim, Dooyoung-
dc.contributor.authorPark, Sungju-
dc.date.accessioned2021-06-22T17:03:12Z-
dc.date.available2021-06-22T17:03:12Z-
dc.date.issued2016-04-
dc.identifier.issn1598-1657-
dc.identifier.issn2233-4866-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14107-
dc.description.abstractThe yield of 3D stacked IC manufacturing improves with the pre-bond integrity testing of through silicon vias (TSVs). In this paper, an efficient pre-bond test method is presented based on IEEE std. 1500, which can precisely diagnose any happening of TSV defects. The IEEE std. 1500 wrapper cells are augmented for the proposed method. The pre-bond TSV test can be performed by adjusting the driving strength of TSV drivers and the test clock frequency. The experimental results show the advantages of the proposed approach.-
dc.format.extent10-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEK PUBLICATION CENTER-
dc.titleEfficient Pre-Bond Testing of TSV Defects Based on IEEE std. 1500 Wrapper Cells-
dc.typeArticle-
dc.publisher.location대한민국-
dc.identifier.doi10.5573/JSTS.2016.16.2.226-
dc.identifier.scopusid2-s2.0-84964802888-
dc.identifier.wosid000375763900015-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.2, pp 226 - 235-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume16-
dc.citation.number2-
dc.citation.startPage226-
dc.citation.endPage235-
dc.type.docTypeArticle-
dc.identifier.kciidART002100879-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHROUGH-SILICON VIAS-
dc.subject.keywordPlusDELAY TEST-
dc.subject.keywordAuthorTSV defect-
dc.subject.keywordAuthorIEEE std. 1500 wrapper cell-
dc.subject.keywordAuthorload capacitance-
dc.subject.keywordAuthordelay test-
dc.subject.keywordAuthorpre-bond test-
dc.identifier.urlhttps://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE06663221&language=ko_KR&hasTopBanner=true-
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