Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Guk-Jin | - |
dc.contributor.author | Kim, In-Seon | - |
dc.contributor.author | Yeung, Michael | - |
dc.contributor.author | Oh, Hye-Keun | - |
dc.date.accessioned | 2021-06-22T17:03:50Z | - |
dc.date.available | 2021-06-22T17:03:50Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 1932-5150 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14132 | - |
dc.description.abstract | The absorber stack on the conventional mask in extreme ultraviolet (EUV) lithography technology leads to mask three-dimensional (3-D) effects including horizontal-vertical (H-V) bias and position shifts through focus. To overcome these problems, we revisit the etched multilayer mask structure. We focus on the etched multilayer mask structure process down to a 16-nm half-pitch at a 0.33 numerical aperture, and we compare the results from this mask to those obtained with a conventional mask. Removing the absorber stack makes the H-V bias of an etched multilayer mask smaller than that of a conventional absorber mask for a 16-nm half-pitch. Thus, the etched multilayer mask can be used to reduce the mask 3-D effects. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS | - |
dc.title | Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Hye-Keun | - |
dc.identifier.doi | 10.1117/1.JMM.15.2.023503 | - |
dc.identifier.scopusid | 2-s2.0-84977536033 | - |
dc.identifier.wosid | 000378141300032 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v.15, no.2 | - |
dc.relation.isPartOf | JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | - |
dc.citation.title | JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | - |
dc.citation.volume | 15 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | EUV | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | CAPABILITY | - |
dc.subject.keywordAuthor | extreme ultraviolet mask structure | - |
dc.subject.keywordAuthor | etched multilayer mask | - |
dc.subject.keywordAuthor | extreme ultraviolet lithography | - |
dc.identifier.url | https://www.spiedigitallibrary.org/journals/journal-of-micro-nanolithography-mems-and-moems/volume-15/issue-2/023503/Mask-three-dimensional-effects-of-etched-multilayer-mask-for-16/10.1117/1.JMM.15.2.023503.short?SSO=1 | - |
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