Charge sharing based 10T SRAM for low-power
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Maroof, Naeem | - |
dc.contributor.author | Sohail, Muhammad | - |
dc.contributor.author | Shin, Hyunchul | - |
dc.date.accessioned | 2021-06-22T17:04:31Z | - |
dc.date.available | 2021-06-22T17:04:31Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 1349-2543 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14160 | - |
dc.description.abstract | We propose a novel charge sharing bit-line 10T SRAM for differential read and single ended (SE) write. Decoupled read provides high noise margin. Read bit-lines are not charged to full V-DD, and these share charge for read 1 operation. A new write driver is proposed for SE write which charges the write-bit-line conditionally. Virtual power rail is used to suppress bit-line leakages. Compared with 6T SRAM, charge sharing scheme potentially consumes only 25% read and 50% write dynamic power. Thorough comparisons with 6T at 45 nm node show that the proposed 10T design has 2x read static noise margin, 71% reduction in total read and 48% reduction in total write power. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | Charge sharing based 10T SRAM for low-power | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shin, Hyunchul | - |
dc.identifier.doi | 10.1587/elex.13.20151033 | - |
dc.identifier.scopusid | 2-s2.0-84960335848 | - |
dc.identifier.wosid | 000372792500001 | - |
dc.identifier.bibliographicCitation | IEICE ELECTRONICS EXPRESS, v.13, no.5, pp.1 - 6 | - |
dc.relation.isPartOf | IEICE ELECTRONICS EXPRESS | - |
dc.citation.title | IEICE ELECTRONICS EXPRESS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | CELL | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordAuthor | low-power | - |
dc.subject.keywordAuthor | 10T | - |
dc.subject.keywordAuthor | charge sharing | - |
dc.subject.keywordAuthor | SNM free | - |
dc.subject.keywordAuthor | single ended | - |
dc.identifier.url | https://www.jstage.jst.go.jp/article/elex/13/5/13_13.20151033/_article | - |
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