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Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Woo-Jin | - |
| dc.contributor.author | Fukuda, Hideaki | - |
| dc.contributor.author | Kim, Tae Hyung | - |
| dc.contributor.author | Choa, Yong-Ho | - |
| dc.date.accessioned | 2021-06-22T18:28:20Z | - |
| dc.date.available | 2021-06-22T18:28:20Z | - |
| dc.date.created | 2021-01-21 | - |
| dc.date.issued | 2016-05 | - |
| dc.identifier.issn | 2162-8769 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/16061 | - |
| dc.description.abstract | Photo-induced deposition of SiOCH thin films and their trench filling properties are discussed. Octamethyl-cycloterasiloxan (OMCTS) was used as a precursor and Xe-2 excimer lamp was used as a light source. The deposition temperature was 80 degrees C and the reactor pressure was maintained at 38.5 Pa. The relative permittivity of as-deposited film was 7.9. Due to the UV cure process, those OH-related bonds in the film were significantly decreased. The k-value of the UV cure film was 2.1. Photo-induced SiOCH was employed to achieve bottom-up filling of high-aspect-ratio features (A/S > 7.5). (C) 2016 The Electrochemical Society. All rights reserved. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Electrochemical Society, Inc. | - |
| dc.title | Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Choa, Yong-Ho | - |
| dc.identifier.doi | 10.1149/2.0381606jss | - |
| dc.identifier.scopusid | 2-s2.0-84976579186 | - |
| dc.identifier.wosid | 000377224700007 | - |
| dc.identifier.bibliographicCitation | ECS Journal of Solid State Science and Technology, v.5, no.6, pp.N32 - N34 | - |
| dc.relation.isPartOf | ECS Journal of Solid State Science and Technology | - |
| dc.citation.title | ECS Journal of Solid State Science and Technology | - |
| dc.citation.volume | 5 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | N32 | - |
| dc.citation.endPage | N34 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | Insulated layer | - |
| dc.subject.keywordAuthor | Low-k | - |
| dc.subject.keywordAuthor | Trench filling | - |
| dc.subject.keywordAuthor | Vacuum uv light-CVD | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1149/2.0381606jss | - |
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Related Researcher
- CHOA, YONG HO
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)