Effect of Al2O3/ZnO Nanolaminate by Atomic Layer Deposition (ALD) on p-Si Photocathode for Photoelectrochemical Hydrogen Evolution
DC Field | Value | Language |
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dc.contributor.author | Kim, Jae-Yoo | - |
dc.contributor.author | Park, Min-Joon | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.date.accessioned | 2021-06-22T18:44:13Z | - |
dc.date.available | 2021-06-22T18:44:13Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/16576 | - |
dc.description.abstract | Al2O3/ZnO (AZO) nanolaminate layer was deposited by atomic layer deposition (ALD) on p-type Si planar photocathode for photoelectrochemical hydrogen evolution reaction. ALD is the excellent method to deposit nanofilms with uniform morphology. AZO nanolaminate layer was expected to protect the p-Si photocathode from oxidation in an ambient condition, and to offer the surface passivation to prevent surface recombination. The % of Al2O3 in AZO was controlled in AZO layer, 100, 80, 50, 20%, and 100% ZnO, on the p-Si photocathode. The total thickness of AZO was fixed at similar to 2 nm by the number of ALD cycles. From the current density versus potential (J-V) curve, 100% Al2O3 showed the lowest overpotential. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Scientific Publishers | - |
dc.title | Effect of Al2O3/ZnO Nanolaminate by Atomic Layer Deposition (ALD) on p-Si Photocathode for Photoelectrochemical Hydrogen Evolution | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung-Ho | - |
dc.identifier.doi | 10.1166/sam.2015.2401 | - |
dc.identifier.scopusid | 2-s2.0-84947314305 | - |
dc.identifier.wosid | 000366295900031 | - |
dc.identifier.bibliographicCitation | Science of Advanced Materials, v.7, no.11, pp.2492 - 2495 | - |
dc.relation.isPartOf | Science of Advanced Materials | - |
dc.citation.title | Science of Advanced Materials | - |
dc.citation.volume | 7 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 2492 | - |
dc.citation.endPage | 2495 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | WATER | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | Photoelectrochemical | - |
dc.subject.keywordAuthor | Nanolaminate | - |
dc.subject.keywordAuthor | Atomic Layer Deposition | - |
dc.identifier.url | https://www.researchgate.net/publication/283319283_Effect_of_Al_2_O_3_ZnO_Nanolaminate_by_Atomic_Layer_Deposition_ALD_on_p-Si_Photocathode_for_Photoelectrochemical_Hydrogen_Evolution | - |
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