Microstructural Characteristics of III-Nitride Layers Grown on Si(110) Substrate by Molecular Beam Epitaxy

오재응

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Microstructural Characteristics of III-Nitride Layers Grown on Si(110) Substrate by Molecular Beam Epitaxy

Authors: 오재응

Issue Date: 11-Feb-2014

Publisher: 한국진공학회

Citation: 한국진공학회 제46회 동계정기학술대회

URI: https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/17240

Conference Name: 한국진공학회 제46회 동계정기학술대회

Place: 보광휘닉스파크(강원도 평창)

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Appears in Collections: COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 2. Conference Papers

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