High-performance metal-oxide semiconductor based optoelectronics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jaehyun | - |
dc.contributor.author | Kwon, Sung Min | - |
dc.contributor.author | Jo, Jeong-Wan | - |
dc.contributor.author | Jo, Chanho | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.accessioned | 2021-06-22T09:21:49Z | - |
dc.date.available | 2021-06-22T09:21:49Z | - |
dc.date.issued | 2020-09 | - |
dc.identifier.issn | 0097-966X | - |
dc.identifier.issn | 2168-0159 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1795 | - |
dc.description.abstract | We investigated high-performance amorphous metal-oxide semiconductor based optoelectronics using low-temperature and solution process technologies. In particular, metal-oxide and quantum dots hybrid phototransistors exhibited ultra-high photodetectivity up to 4x1017 Jones in a broad range of detection wavelength from ultraviolet to infrared ranges. In addition, we employed artificial visual perception circuit based on metal-oxide synaptic transistors with metal chalcogenide semiconductors for optoelectronic neuromorphic devices. We also demonstrated large-scaled ultra-flexible and stretchable device showing promising next-generation wearable optoelectronics. © 2020 SID. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Wiley | - |
dc.title | High-performance metal-oxide semiconductor based optoelectronics | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1002/sdtp.13923 | - |
dc.identifier.scopusid | 2-s2.0-85094188399 | - |
dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.51, no.1, pp 536 - 539 | - |
dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
dc.citation.volume | 51 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 536 | - |
dc.citation.endPage | 539 | - |
dc.type.docType | Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordPlus | Dielectric devices | - |
dc.subject.keywordPlus | Metallic compounds | - |
dc.subject.keywordPlus | MOS devices | - |
dc.subject.keywordPlus | Oxide semiconductors | - |
dc.subject.keywordPlus | Semiconductor quantum dots | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Transistors | - |
dc.subject.keywordPlus | Amorphous metals | - |
dc.subject.keywordPlus | Detection wavelengths | - |
dc.subject.keywordPlus | Infrared range | - |
dc.subject.keywordPlus | Low temperatures | - |
dc.subject.keywordPlus | Metal chalcogenide | - |
dc.subject.keywordPlus | Metal oxide semiconductor | - |
dc.subject.keywordPlus | Solution process | - |
dc.subject.keywordPlus | Visual perception | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordAuthor | Amorphous metal-oxide semiconductor | - |
dc.subject.keywordAuthor | Flexible/stretchable electronics | - |
dc.subject.keywordAuthor | Neuromorphic devices | - |
dc.subject.keywordAuthor | Optoelectronics | - |
dc.subject.keywordAuthor | Phototransistors | - |
dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.13923 | - |
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