Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam
- Authors
- Lim, Chulseung; Jeong, Hyun Soo; Bak, Geunyong; Baeg, Sanghyeon; Wen, Shi-Jie; Wong, Richard
- Issue Date
- Apr-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- DDR3; displacement damage effect; DRAM cell retention time; DRAMs; proton beams; SDRAM; stuck bits; TID effect
- Citation
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.62, no.2, pp.520 - 526
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Volume
- 62
- Number
- 2
- Start Page
- 520
- End Page
- 526
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18768
- DOI
- 10.1109/TNS.2015.2392851
- ISSN
- 0018-9499
- Abstract
- This work shares the observations of stuck bits by proton beam in DDR3 components in 3x-nm technologies. The DDR3 SDRAMs from four major DRAM manufacturers were tested with a 45-MeV proton beam at an operating frequency of 800 MHz. The beam exposure resulted in single bit upset (SBU) and multiple bit upsets (MBUs), as well as single and multiple stuck bits in a word due to micro-dose and displacement damage effects. The number of stuck bits reduced as the refresh interval duration was decreased. Moreover, for the tested samples, the stuck bits were recovered completely and could be run in the normal operation mode after annealing at 150 degrees C. The occurrence of multiple stuck bits in a word was likely due to damages to the control logic and those stuck bits were recovered as well after annealing at 150 degrees C.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18768)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.