A 1.2-V 4.2-ppm/degrees C High-Order Curvature-Compensated CMOS Bandgap Reference
DC Field | Value | Language |
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dc.contributor.author | Duan, Quanzhen | - |
dc.contributor.author | Roh, Jeongjin | - |
dc.date.accessioned | 2021-06-22T20:23:42Z | - |
dc.date.available | 2021-06-22T20:23:42Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.issn | 1549-8328 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18819 | - |
dc.description.abstract | This study presents a high-precision CMOS bandgap reference (BGR) circuit with low supply voltage. The proposed BGR circuit consists of two BGR cores and a curvature correction circuit, which includes a current mirror and a summing circuit. Two BGR cores adopt conventional structures with the curvature-down characteristics. A current-mirror circuit is proposed to implement one of the BGR cores to have the curvature-up characteristic. Selection of the appropriate resistances in the BGR cores results in one reference voltage with a well balanced curvature-down characteristic and another reference voltage with an evenly balanced curvature-up characteristic. The summation of these reference voltages is proposed to achieve a high-order curvature compensation. This curvature correction circuit causes the proposed BGR circuit without any trimming to show a measured temperature coefficient (TC) as low as 4.2 ppm/degrees C over a wide temperature range of 160 degrees C (-40 similar to 120 degrees C) at a power supply voltage of 1.2 V. The average TC for 8 random samples is approximately 9.3 ppm/degrees C. The measured power-supply rejection ratio (PSRR) of -30 dB is achieved at the frequency of 100 kHz. The total chip size is 0.063mm(2) with a standard 0.13-mu m CMOS process. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 1.2-V 4.2-ppm/degrees C High-Order Curvature-Compensated CMOS Bandgap Reference | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Roh, Jeongjin | - |
dc.identifier.doi | 10.1109/TCSI.2014.2374832 | - |
dc.identifier.scopusid | 2-s2.0-85027949047 | - |
dc.identifier.wosid | 000350799100006 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.62, no.3, pp.662 - 670 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | - |
dc.citation.title | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | - |
dc.citation.volume | 62 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 662 | - |
dc.citation.endPage | 670 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE | - |
dc.subject.keywordPlus | SUB-1-V OPERATION | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordAuthor | Bandgap reference | - |
dc.subject.keywordAuthor | high-order curvature compensation | - |
dc.subject.keywordAuthor | high-precision | - |
dc.subject.keywordAuthor | low voltage | - |
dc.subject.keywordAuthor | temperature coefficient | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6999965 | - |
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