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Deep levels defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on Si(111)
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-22T21:08:13Z | - |
| dc.date.available | 2021-06-22T21:08:13Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2012-09-27 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/19895 | - |
| dc.publisher | 오사카 대학교 | - |
| dc.title | Deep levels defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on Si(111) | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | MBE 2012 | - |
| dc.relation.isPartOf | MBE 2012 | - |
| dc.citation.title | MBE 2012 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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