Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO2/a-InGaZnO/SiO2 Stack
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Baeck, Ju Heyuck | - |
dc.contributor.author | Shin, Hyun Soo | - |
dc.contributor.author | Bae, Jong Uk | - |
dc.contributor.author | Park, Kwon-Shik | - |
dc.contributor.author | Kang, In Byeong | - |
dc.date.accessioned | 2021-06-22T22:25:12Z | - |
dc.date.available | 2021-06-22T22:25:12Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21587 | - |
dc.description.abstract | We demonstrate top-gate and bottom-gate structures of amorphous indium-gallium-zinc-oxide thin-film transistors and compare their device operation. A replica material stack is fabricated for depth profile characterization to correlate with device results. We mainly focus on the oxygen content at the top and bottom. Key process factors that affect device reliability are determined based on material analysis, subgap density-of-states extraction by monochromatic photonic capacitance-voltage technique, and device simulations. We found that top-gate devices are influenced by higher deep acceptor-like states under positive gate bias-temperature stress, whereas the bottom-gate devices suffer reliability degradation under negative gate bias-temperature stress due to the decrease in oxygen content at the bottom interface. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO2/a-InGaZnO/SiO2 Stack | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Saeroonter | - |
dc.identifier.doi | 10.1109/LED.2014.2351492 | - |
dc.identifier.scopusid | 2-s2.0-84907627444 | - |
dc.identifier.wosid | 000343011300021 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1037 - 1039 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1037 | - |
dc.citation.endPage | 1039 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | Amorphous InGaZnO (a-IGZO) | - |
dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | subgap density of states (DOS) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6894112 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.