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Novel Error Detection Scheme With the Harmonious Use of Parity Codes, Well-Taps, and Interleaving Distance

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dc.contributor.authorJeon, Sang Hoon-
dc.contributor.authorLee, Soonyoung-
dc.contributor.authorBaeg, Sanghyeon-
dc.contributor.authorKim, Ilgon-
dc.contributor.authorKim, Gunrae-
dc.date.accessioned2021-06-22T22:25:14Z-
dc.date.available2021-06-22T22:25:14Z-
dc.date.created2021-01-21-
dc.date.issued2014-10-
dc.identifier.issn0018-9499-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21588-
dc.description.abstractThis paper explores the effectiveness of error detection schemes in increasingly multiple-cell upset-dominant technologies, specifically SRAM. A review of interleaving distance, parity codes, and well-taps is conducted to examine each attribute. Then, the paper proposes a novel error detection scheme with the harmonious use of the multiple-cell upset inhibition effects of well-taps, the detectability of parity codes, and an interleaving distance scheme to create an effective error detection scheme that is both flexible and has a high implementation prospect. A row depth model is created to assess the effectiveness of the proposed scheme. The model shows that advanced technologies with greater multiple-cell upset sizes and ratios will experience error detection failures with schemes such as single error correction-double error detection, whereas the proposed scheme remains effective. Experimental data supports the premise that well-taps inhibit multiple-cell upset, as it is found that 1% cross well-taps. The proposed scheme is recognized to be at least three times better against error detection failures than single error correction-double error detection.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleNovel Error Detection Scheme With the Harmonious Use of Parity Codes, Well-Taps, and Interleaving Distance-
dc.typeArticle-
dc.contributor.affiliatedAuthorBaeg, Sanghyeon-
dc.identifier.doi10.1109/TNS.2014.2349504-
dc.identifier.scopusid2-s2.0-84907974832-
dc.identifier.wosid000343980900026-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.61, no.5, pp.2711 - 2717-
dc.relation.isPartOfIEEE TRANSACTIONS ON NUCLEAR SCIENCE-
dc.citation.titleIEEE TRANSACTIONS ON NUCLEAR SCIENCE-
dc.citation.volume61-
dc.citation.number5-
dc.citation.startPage2711-
dc.citation.endPage2717-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaNuclear Science & Technology-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNuclear Science & Technology-
dc.subject.keywordPlusNM-
dc.subject.keywordPlusUPSETS-
dc.subject.keywordPlusCHALLENGES-
dc.subject.keywordPlusSELECTION-
dc.subject.keywordPlusSRAMS-
dc.subject.keywordAuthorEffective interleaving distance-
dc.subject.keywordAuthorerror correction code-
dc.subject.keywordAuthorinterleaving distance-
dc.subject.keywordAuthormultiple-bit upset-
dc.subject.keywordAuthormultiple-cell upset-
dc.subject.keywordAuthorparity code-
dc.subject.keywordAuthorrow depth-
dc.subject.keywordAuthorsingle error correction-double error detection-
dc.subject.keywordAuthorsingle-event effect-
dc.subject.keywordAuthorwell-tap-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/6909089-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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