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Effect of external electric field on deep level defects in strained In(0.17)Ga(0.83)N/GaN multi quantum well blue LED
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-22T22:29:58Z | - |
| dc.date.available | 2021-06-22T22:29:58Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2011-07-05 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21755 | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Effect of external electric field on deep level defects in strained In(0.17)Ga(0.83)N/GaN multi quantum well blue LED | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | ISPSA-2011 | - |
| dc.relation.isPartOf | ISPSA-2011 | - |
| dc.citation.title | ISPSA-2011 | - |
| dc.citation.conferencePlace | 제주 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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