ScholarWorks@Hanyang University ERICA Campus

Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Etched multilayer mask in EUV lithography for 16 nm node and below

Full metadata record
DC Field Value Language
dc.contributor.authorKim, Guk-Jin-
dc.contributor.authorYeung, Michael-
dc.contributor.authorBarouch, Eytan-
dc.contributor.authorOh, Hye-Keun-
dc.date.accessioned2021-06-23T01:23:28Z-
dc.date.available2021-06-23T01:23:28Z-
dc.date.issued2014-07-
dc.identifier.issn0277-786X-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25440-
dc.description.abstractEtched multilayer masks in EUV lithography for 16 nm node and below are better than conventional binary masks due to their higher image intensities and image slopes. However, aerial-image simulation of etched multilayer masks requires special care in order to obtain accurate results. In this paper, we first show that the usual Hopkins method for partial coherence simulation gives very inaccurate results when off-axis illumination is used. We then discuss an enhanced Hopkins method which provides far greater accuracy. Simulation results are presented to demonstrate the importance of using the enhanced Hopkins method for EUV lithography simulation. © 2014 SPIE.-
dc.format.extent7-
dc.language영어-
dc.language.isoENG-
dc.publisherSPIE-
dc.titleEtched multilayer mask in EUV lithography for 16 nm node and below-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1117/12.2069404-
dc.identifier.scopusid2-s2.0-84922734679-
dc.identifier.wosid000343106700025-
dc.identifier.bibliographicCitationProceedings of SPIE - The International Society for Optical Engineering, v.9256, pp 1 - 7-
dc.citation.titleProceedings of SPIE - The International Society for Optical Engineering-
dc.citation.volume9256-
dc.citation.startPage1-
dc.citation.endPage7-
dc.type.docTypeConference Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaOptics-
dc.relation.journalWebOfScienceCategoryOptics-
dc.subject.keywordPlusLithography-
dc.subject.keywordPlusMasks-
dc.subject.keywordPlusMultilayers-
dc.subject.keywordPlusNanotechnology-
dc.subject.keywordPlusPhotomasks-
dc.subject.keywordPlusVoltage measurement-
dc.subject.keywordPlusAerial image simulation-
dc.subject.keywordPlusEUV lithography simulation-
dc.subject.keywordPlusEUVL masks-
dc.subject.keywordPlusImage intensities-
dc.subject.keywordPlusLithography Simulation-
dc.subject.keywordPlusMulti-layer masks-
dc.subject.keywordPlusOff axis illumination-
dc.subject.keywordPlusPartial coherence-
dc.subject.keywordPlusExtreme ultraviolet lithography-
dc.subject.keywordAuthorEtched ML mask-
dc.subject.keywordAuthorEUVL mask-
dc.subject.keywordAuthorLithography simulation-
dc.identifier.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/9256/1/Etched-multilayer-mask-in-EUV-lithography-for-16-nm-node/10.1117/12.2069404.short-
Files in This Item
Go to Link
Appears in
Collections
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
Show simple item record

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr

COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어