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Etched multilayer mask is better than conventional absorber mask
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, G.-J. | - |
| dc.contributor.author | Oh, H.-K. | - |
| dc.contributor.author | Kim, I.-S. | - |
| dc.contributor.author | Yeung, M. | - |
| dc.contributor.author | Barouch, E. | - |
| dc.date.accessioned | 2021-06-23T01:24:13Z | - |
| dc.date.available | 2021-06-23T01:24:13Z | - |
| dc.date.created | 2021-01-22 | - |
| dc.date.issued | 2014-07 | - |
| dc.identifier.issn | 0277-786X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25462 | - |
| dc.description.abstract | The main problem in extreme ultra-violet (EUV) lithography for mass production is low source power. In order to overcome this problem, we suggest to use an etched multilayer mask introduced several years ago. The etched multilayer mask structure does not need an absorber stack and it was found that we could get higher aerial image slope and peak intensity than those of the conventional absorber mask structure. Also, the etched multilayer mask can reduce the pattern shift and horizontal-vertical (H-V) bias. © 2014 SPIE. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | SPIE | - |
| dc.title | Etched multilayer mask is better than conventional absorber mask | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Oh, H.-K. | - |
| dc.identifier.doi | 10.1117/12.2069885 | - |
| dc.identifier.scopusid | 2-s2.0-84922689870 | - |
| dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.9256 | - |
| dc.relation.isPartOf | Proceedings of SPIE - The International Society for Optical Engineering | - |
| dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
| dc.citation.volume | 9256 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Extreme ultraviolet lithography | - |
| dc.subject.keywordPlus | Lithography | - |
| dc.subject.keywordPlus | Masks | - |
| dc.subject.keywordPlus | Photomasks | - |
| dc.subject.keywordPlus | Absorber stacks | - |
| dc.subject.keywordPlus | EUV mask | - |
| dc.subject.keywordPlus | Extreme ultraviolets | - |
| dc.subject.keywordPlus | Mask structures | - |
| dc.subject.keywordPlus | Mass production | - |
| dc.subject.keywordPlus | Multi-layer masks | - |
| dc.subject.keywordPlus | Pattern shifts | - |
| dc.subject.keywordPlus | Peak intensity | - |
| dc.subject.keywordPlus | Multilayers | - |
| dc.subject.keywordAuthor | Etched multilayer mask | - |
| dc.subject.keywordAuthor | EUV mask | - |
| dc.subject.keywordAuthor | Mask structure | - |
| dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/9256/1/Etched-multilayer-mask-is-better-than-conventional-absorber-mask/10.1117/12.2069885.short | - |
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