Growth and Electrical Properties of Highly Resistive In:AlAsxSb1-x on Si Substrates

Abstract

The growth of III-V materials on Si substrates has become particularly attractive since several research groups have been actively pursuing III-V based electronic devices in recent years, showing III-Vs as one of the possible successor technologies to be integrated onto the existing silicon platform [1]. A family of 6.1 angstrom material systems such as AlSb and InAs offers a wide range of electronic band gaps, band-gap offsets, and electronic barriers along with extremely high electron mobility. It, therefore, enables a variety of extremely faster and lower-power consumptive electronic devices [2]. However, a large bandgap material in Sb based compounds such as AlxGa1-xSb grown on Si substrate has been unintentionally p-type and it is usually very sensitive to the growth condition, i.e. V/III and growth temperature, so that the electrical properties of these materials is somewhat unsuitable for the use of the buffer material which is extremely important for high-speed and low-power electronic device applications.