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Strain evaluation of InN layer grown on AlN/Si(111)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T01:49:21Z | - |
| dc.date.available | 2021-06-23T01:49:21Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2008-08-04 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/26026 | - |
| dc.description.abstract | InN has promising properties such as a small effective mass, a high electron drift velocity, and small band gap energy, which make it useful in a variety of high speed devices, high efficiency solar cells, and infrared light sources [1]. However, InN remains a mysterious material, especoally with regard to crystal growth. | - |
| dc.publisher | Department of Physics and Astronomy | - |
| dc.title | Strain evaluation of InN layer grown on AlN/Si(111) | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | The 15th International Conference on Molecular Beam Epitaxy | - |
| dc.relation.isPartOf | The 15th International Conference on Molecular Beam Epitaxy | - |
| dc.citation.title | The 15th International Conference on Molecular Beam Epitaxy | - |
| dc.citation.conferencePlace | VANCOUVER, CANADA | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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