Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation
DC Field | Value | Language |
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dc.contributor.author | Choi, Younghwan | - |
dc.contributor.author | Sim, Sangwan | - |
dc.contributor.author | Lim, Seong Chu | - |
dc.contributor.author | Lee, Young Hee | - |
dc.contributor.author | Choi, Hyunyong | - |
dc.date.accessioned | 2021-06-23T02:04:08Z | - |
dc.date.available | 2021-06-23T02:04:08Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/26312 | - |
dc.description.abstract | Understanding multiple-exciton generation (MEG) in quantum dots (QDs) requires in-depth measurements of transient exciton dynamics. Because MEG typically faces competing ultrafast energy-loss intra-band relaxation, it is of central importance to investigate the emerging time-scale of the MEG kinetics. Here, we present ultrafast spectroscopic measurements of the MEG in PbS QDs via probing the ground-state biexciton transients. Specifically, we directly compare the biexciton spectra with the single-exciton ones before and after the intra-band relaxation. Early emergence of MEG is evidenced by observing transient Stark shift and quasi-instantaneous linewidth broadening, both of which take place before the intra-band relaxation. Photon-density-dependent study shows that the broadened biexciton linewidth strongly depends on the MEG-induced extra-exciton generation. Long after the intra-band relaxation, the biexciton broadening is small and the single-exciton state filling is dominant. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sim, Sangwan | - |
dc.identifier.doi | 10.1038/srep03206 | - |
dc.identifier.scopusid | 2-s2.0-84887710744 | - |
dc.identifier.wosid | 000327020000004 | - |
dc.identifier.bibliographicCitation | Scientific Reports, v.3, pp.1 - 6 | - |
dc.relation.isPartOf | Scientific Reports | - |
dc.citation.title | Scientific Reports | - |
dc.citation.volume | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | CARRIER MULTIPLICATION YIELDS | - |
dc.subject.keywordPlus | RELAXATION DYNAMICS | - |
dc.subject.keywordPlus | OPTICAL NONLINEARITIES | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | PBSE | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | TRANSMISSION | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | PHOTON | - |
dc.identifier.url | https://www.scopus.com/record/display.uri?eid=2-s2.0-84887710744&origin=inward&txGid=a366dbe2f214d7478d454a80a785c196 | - |
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