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Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation

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dc.contributor.authorChoi, Younghwan-
dc.contributor.authorSim, Sangwan-
dc.contributor.authorLim, Seong Chu-
dc.contributor.authorLee, Young Hee-
dc.contributor.authorChoi, Hyunyong-
dc.date.accessioned2021-06-23T02:04:08Z-
dc.date.available2021-06-23T02:04:08Z-
dc.date.created2021-01-21-
dc.date.issued2013-11-
dc.identifier.issn2045-2322-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/26312-
dc.description.abstractUnderstanding multiple-exciton generation (MEG) in quantum dots (QDs) requires in-depth measurements of transient exciton dynamics. Because MEG typically faces competing ultrafast energy-loss intra-band relaxation, it is of central importance to investigate the emerging time-scale of the MEG kinetics. Here, we present ultrafast spectroscopic measurements of the MEG in PbS QDs via probing the ground-state biexciton transients. Specifically, we directly compare the biexciton spectra with the single-exciton ones before and after the intra-band relaxation. Early emergence of MEG is evidenced by observing transient Stark shift and quasi-instantaneous linewidth broadening, both of which take place before the intra-band relaxation. Photon-density-dependent study shows that the broadened biexciton linewidth strongly depends on the MEG-induced extra-exciton generation. Long after the intra-band relaxation, the biexciton broadening is small and the single-exciton state filling is dominant.-
dc.language영어-
dc.language.isoen-
dc.publisherNature Publishing Group-
dc.titleUltrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation-
dc.typeArticle-
dc.contributor.affiliatedAuthorSim, Sangwan-
dc.identifier.doi10.1038/srep03206-
dc.identifier.scopusid2-s2.0-84887710744-
dc.identifier.wosid000327020000004-
dc.identifier.bibliographicCitationScientific Reports, v.3, pp.1 - 6-
dc.relation.isPartOfScientific Reports-
dc.citation.titleScientific Reports-
dc.citation.volume3-
dc.citation.startPage1-
dc.citation.endPage6-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalWebOfScienceCategoryMultidisciplinary Sciences-
dc.subject.keywordPlusCARRIER MULTIPLICATION YIELDS-
dc.subject.keywordPlusRELAXATION DYNAMICS-
dc.subject.keywordPlusOPTICAL NONLINEARITIES-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusPBSE-
dc.subject.keywordPlusENERGY-
dc.subject.keywordPlusTRANSMISSION-
dc.subject.keywordPlusABSORPTION-
dc.subject.keywordPlusPHOTON-
dc.identifier.urlhttps://www.scopus.com/record/display.uri?eid=2-s2.0-84887710744&origin=inward&txGid=a366dbe2f214d7478d454a80a785c196-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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