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Optical anisotropy in InGaN/GaN quantum-well light-emitting diades with a general crystal orientation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T02:08:01Z | - |
| dc.date.available | 2021-06-23T02:08:01Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2008-05-06 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/26398 | - |
| dc.description.abstract | We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotroy is found to increase rapidly with increasing crystal angle. | - |
| dc.publisher | IEEE/LEOS, Lasers and Electro-Optics Society | - |
| dc.title | Optical anisotropy in InGaN/GaN quantum-well light-emitting diades with a general crystal orientation | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | CLEO 2008 | - |
| dc.relation.isPartOf | CLEO 2008 | - |
| dc.citation.title | CLEO 2008 | - |
| dc.citation.conferencePlace | San Jose, CA, USA | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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