Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Peta, Koteswara Rao | - |
dc.contributor.author | Lee, Sang-Tae | - |
dc.contributor.author | Kim, Moon-Deock | - |
dc.contributor.author | Oh, Jae-Eung | - |
dc.contributor.author | Kim, Song-Gang | - |
dc.contributor.author | Kim, Tae-Geun | - |
dc.date.accessioned | 2021-06-23T02:43:06Z | - |
dc.date.available | 2021-06-23T02:43:06Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/27120 | - |
dc.description.abstract | Deep level transient spectroscopy has been used to characterize the deep level traps in Ga- and N-polarity GaN films grown by plasma assisted molecular beam epitaxy on Si(111) substrate. The two deep level traps at E-c-E-t similar to 0.21 eV (E-1) and E-c-E-t similar to 0.48 eV (E-2) have been detected in Ga-polarity GaN, The E-1 level commonly observed deep trap related to the nitrogen vacancy in GaN. It is found that, the E-2 level exhibits logarithmic capture kinetic behavior and substantially increases its capture cross section from 10(-15) to 10(-12) cm(2) by employing different pulse width ranging from 5 ms to 35 ms. Such behavior of E-2 trap with filling pulse length attributes that, the trap is originated from threading dislocations. In case of N-polarity GaN, we observed two deep level traps with activation energies of E-c-E-t similar to 0.53 eV (E-3) and E-c-E-t similar to 0.89 eV (E-4). The estimated capture cross-sections (sigma(s)) for these defects were found to be similar to 2.51 x 10(-15) cm(2) and similar to 5.21 x 10(-16) cm(2) respectively. The E-3 and E-4 are nitrogen antisite point defect and extended defect related to dislocation deep levels, results from growth on N-polarity crystal structure. Crown Copyright (c) 2013 Published by Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111) | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Jae-Eung | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2012.12.118 | - |
dc.identifier.scopusid | 2-s2.0-84885431819 | - |
dc.identifier.wosid | 000323355900076 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.378, pp.299 - 302 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 378 | - |
dc.citation.startPage | 299 | - |
dc.citation.endPage | 302 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | CENTERS | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | TRAPS | - |
dc.subject.keywordAuthor | Defects | - |
dc.subject.keywordAuthor | Molecular beam epitaxy | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | Semiconducting IIII-V materials | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024812010032?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.