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Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon
- Authors
- Li, Xiaopeng; Xiao, Yanjun; Bang, Jin Ho; Lausch, Dominik; Meyer, Sylke; Miclea, Paul-Tiberiu; Jung, Jin-Young; Schweizer, Stefan L.; Lee, Jung-Ho; Wehrspohn, Ralf B.
- Issue Date
- Jun-2013
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Keywords
- metal assisted chemical etching; metallurgical silicon; silicon nanowire; metal impurities; photoelectrochemical cell
- Citation
- Advanced Materials, v.25, no.23, pp 3187 - 3191
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Advanced Materials
- Volume
- 25
- Number
- 23
- Start Page
- 3187
- End Page
- 3191
- ISSN
- 0935-9648
1521-4095
- Abstract
- Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large areas of silicon nanowires (SiNW) are fabricated. The purification effect induces a similar to 35% increase in photocurrent for a SiNW based photoelectrochemical cell.
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Related Researcher
- Lee, Jung-Ho
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)