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Pulased IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T05:10:46Z | - |
| dc.date.available | 2021-06-23T05:10:46Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2004-09-17 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30343 | - |
| dc.description.abstract | Wide band-gap dcvices have received much attention for high-frequency and high-power applicarions. Among them, AlGaN/GaN HEMTs have great potential, because of the material advantages such as high breakdown voltage, high electron mobility and high electorn density. But there are still some issues on lGaN/GaN HEMTs, such as current collapse, self- heating effect considering the bias power condition. So in this paper, we have studied self-heating effect using pulsed IV asd IVT measurement in the same bias power condetion- isothermal condition. | - |
| dc.publisher | The Japan Society of Applied Physics | - |
| dc.title | Pulased IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | Extended Abstracts of the 2004 International Conference on SOLID STATE DEVICES AND MATERIALS | - |
| dc.relation.isPartOf | Extended Abstracts of the 2004 International Conference on SOLID STATE DEVICES AND MATERIALS | - |
| dc.citation.title | Extended Abstracts of the 2004 International Conference on SOLID STATE DEVICES AND MATERIALS | - |
| dc.citation.conferencePlace | 일본, Tower Hall Funabori | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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