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Prediction of High NA ArF lithography capabilities for 70nm technology node using simulation

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dc.contributor.author오혜근-
dc.date.accessioned2021-06-23T05:32:38Z-
dc.date.available2021-06-23T05:32:38Z-
dc.date.created2020-12-17-
dc.date.issued2003-10-29-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30886-
dc.description.abstractIn this article, we will present the possible performance of high numerical aperture(NA) 193nm lithography for 70nm technology node using in-house simulaor. This simulator can calculate the vector diffraction phenomenon which may not be neglected for high NA imaging.-
dc.publisher일본응용물리학회-
dc.titlePrediction of High NA ArF lithography capabilities for 70nm technology node using simulation-
dc.typeConference-
dc.contributor.affiliatedAuthor오혜근-
dc.identifier.bibliographicCitationMicroprocesses and Nanotechnology Conference 2003-
dc.relation.isPartOfMicroprocesses and Nanotechnology Conference 2003-
dc.citation.titleMicroprocesses and Nanotechnology Conference 2003-
dc.citation.conferencePlace일본 도쿄-
dc.type.rimsCONF-
dc.description.journalClass1-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 2. Conference Papers

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