Prediction of High NA ArF lithography capabilities for 70nm technology node using simulation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2021-06-23T05:32:38Z | - |
dc.date.available | 2021-06-23T05:32:38Z | - |
dc.date.created | 2020-12-17 | - |
dc.date.issued | 2003-10-29 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30886 | - |
dc.description.abstract | In this article, we will present the possible performance of high numerical aperture(NA) 193nm lithography for 70nm technology node using in-house simulaor. This simulator can calculate the vector diffraction phenomenon which may not be neglected for high NA imaging. | - |
dc.publisher | 일본응용물리학회 | - |
dc.title | Prediction of High NA ArF lithography capabilities for 70nm technology node using simulation | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | 오혜근 | - |
dc.identifier.bibliographicCitation | Microprocesses and Nanotechnology Conference 2003 | - |
dc.relation.isPartOf | Microprocesses and Nanotechnology Conference 2003 | - |
dc.citation.title | Microprocesses and Nanotechnology Conference 2003 | - |
dc.citation.conferencePlace | 일본 도쿄 | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 1 | - |
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