Influence of the Mobility of Pt Nanoparticles on the Anisotropic Etching Properties of Silicon
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Xiaopeng | - |
dc.contributor.author | Xiao, Yanjun | - |
dc.contributor.author | Yan, Chenglin | - |
dc.contributor.author | Zhou, Keya | - |
dc.contributor.author | Schweizer, Stefan L. | - |
dc.contributor.author | Sprafke, Alexander | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.contributor.author | Wehrspohn, Ralf B. | - |
dc.date.accessioned | 2021-06-23T05:43:50Z | - |
dc.date.available | 2021-06-23T05:43:50Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2013 | - |
dc.identifier.issn | 2162-8742 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30955 | - |
dc.description.abstract | Metal-assisted chemical etching (MaCE) has been shown to be a powerful and cost-effective method for surface nano-texturing and silicon micromachining. Since the motion of a metal catalyst during the etching process determines the etched morphology, understanding the mobility of the metal catalysts would enable precise control of the silicon structuring. Through the investigation of Pt nanoparticle (PtNP)-induced etching of silicon, we find that the Schottky barrier height of the metal-Si contacts strongly influences the charge transfer process during the etching. Consequently, the motion of the PtNPs is affected, which is different from previous understandings based on an electrokinetic model. (C) 2012 The Electrochemical Society. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | The Electrochemical Society | - |
dc.title | Influence of the Mobility of Pt Nanoparticles on the Anisotropic Etching Properties of Silicon | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung-Ho | - |
dc.identifier.doi | 10.1149/2.010302ssl | - |
dc.identifier.scopusid | 2-s2.0-84880557814 | - |
dc.identifier.wosid | 000318342500007 | - |
dc.identifier.bibliographicCitation | ECS Solid State Letters, v.2, no.2, pp.P22 - P24 | - |
dc.relation.isPartOf | ECS Solid State Letters | - |
dc.citation.title | ECS Solid State Letters | - |
dc.citation.volume | 2 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | P22 | - |
dc.citation.endPage | P24 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | MACROPOROUS SILICON | - |
dc.subject.keywordAuthor | METAL PARTICLES | - |
dc.subject.keywordAuthor | FABRICATION | - |
dc.subject.keywordAuthor | CATALYST | - |
dc.subject.keywordAuthor | NANOWIRES | - |
dc.subject.keywordAuthor | LAYERS | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/2.010302ssl | - |
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