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Dual Band SP5T PIN Diode MMIC 특성연구
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T06:11:31Z | - |
| dc.date.available | 2021-06-23T06:11:31Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2003-02-27 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/31561 | - |
| dc.description.abstract | This paper present the results of a MMIC SP5T PIN diode switch for dual band(GSM/WCDMA) applications. Firstly, we developed a small signal model for expecting the insertion loss and isolation of a circuit and a large signal model for their power dependence. Secondly, we made SPDT hybrid PIN switch. For GSM, the insertion loss and isolation of MMIC switch measured at 0.9GHz were 0.505dB and 31.848dB, respectively. For W-CDMA, the insertion loss and isolation of MMIC switch measured at 2GHz were 0.45dB and 26.298dB ,respectively. The fabricated MMIC switch had power handing capability better than 35dBm. | - |
| dc.publisher | 삼성전자, 한국반도체산업협회 | - |
| dc.title | Dual Band SP5T PIN Diode MMIC 특성연구 | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | 제10회 한국반도체학술대회 | - |
| dc.relation.isPartOf | 제10회 한국반도체학술대회 | - |
| dc.citation.title | 제10회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 그래드힐튼 서울호텔 컨벤션센터 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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