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1W AlGaN/GaN HEMT Power Amplifier Module
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T06:33:48Z | - |
| dc.date.available | 2021-06-23T06:33:48Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2002-07-11 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/32008 | - |
| dc.description.abstract | Microwave power Amplifier is demonstrated using AlGaN/GAN High electron mobility transistors(HEMTs). The output and input impedance is obtained from load-pull simulation of LSM(Large Signal Model). The amplifier has 11dB gain and 31dbm output power at 1dB gain compression point at 2.1GHz. The IMD(Intermodulation Distortion) and ACPR(Adjacent Channel Power Ratio)is measured, also | - |
| dc.publisher | KAIST, 한국반도체산업협회 | - |
| dc.title | 1W AlGaN/GaN HEMT Power Amplifier Module | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | 한국반도체학술대회 | - |
| dc.relation.isPartOf | 한국반도체학술대회 | - |
| dc.citation.title | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 천안상록리조트 컨벤션센터 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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