Efficient Use of Unused Spare Columns for Reducing Memory Miscorrections
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Jihun | - |
dc.contributor.author | Ishaq, Umair | - |
dc.contributor.author | Song, Jaehoon | - |
dc.contributor.author | Park, Sungju | - |
dc.date.accessioned | 2021-06-23T06:52:57Z | - |
dc.date.available | 2021-06-23T06:52:57Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2012-09 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/32178 | - |
dc.description.abstract | In the deep sub-micron ICs, growing amounts of on-die memory and scaling effects make embedded memories increasingly vulnerable to reliability and yield problems. Spare columns are often included in memories to repair defective cells or bit lines during production test. In many cases, the repair process will not use all spare columns. Schemes have been proposed to exploit these unused spare columns to store additional check bits which can be used to reduce the miscorrection probability for triple errors in single error correction double error detection (SEC-DED). These additional check bits increase the dimensions of the parity check matrix (H-matrix) requiring extra area overhead. A method is proposed in this paper to efficiently fill the extra rows of the H-matrix on the basis of similarity of logic between the other rows. Optimization of the whole H-matrix is accomplished through logic sharing within a feasible operating time resulting in reduced area overhead. A detailed implementation using fuse technology is also proposed in this paper. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.title | Efficient Use of Unused Spare Columns for Reducing Memory Miscorrections | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Sungju | - |
dc.identifier.doi | 10.5573/JSTS.2012.12.3.331 | - |
dc.identifier.scopusid | 2-s2.0-84867713912 | - |
dc.identifier.wosid | 000313339100011 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.12, no.3, pp.331 - 340 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 12 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 331 | - |
dc.citation.endPage | 340 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001702096 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | REPAIR | - |
dc.subject.keywordPlus | SPEED | - |
dc.subject.keywordAuthor | Memory ECC | - |
dc.subject.keywordAuthor | SEC-DED | - |
dc.subject.keywordAuthor | logic sharing | - |
dc.subject.keywordAuthor | parity check matrix | - |
dc.subject.keywordAuthor | misscorrection probability | - |
dc.subject.keywordAuthor | built-in self repair | - |
dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01983986&language=ko_KR&hasTopBanner=true | - |
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