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전기적인 튜닝이 가능한 전치 왜곡기(Pre-Distorter)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T06:59:00Z | - |
| dc.date.available | 2021-06-23T06:59:00Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2002-02-21 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/32320 | - |
| dc.description.abstract | A miniature predistorter with electrical tuning capacity has been developed, consisting of single field Effect Transistor and necessary auxiliary circuits which is easily realized in a monolithic form. The parameters of predistorter such as direction and magnitude of both gain and phase as well as a turning input power can be adjusted by controlling the gate bias of a transistor. Small insertion loss than 3 dB over a broad frequency range from 800MHz to 12GHz without input and output loss can be achieved by adjusting the value of auxiliary circuit. A great improvement of Adjacent Channel Power Ratio(ACPR) by 13 dBc on an 2GHz band power amplifier has been demonstrated. | - |
| dc.publisher | KAIST,한국반도체산업협회 | - |
| dc.title | 전기적인 튜닝이 가능한 전치 왜곡기(Pre-Distorter) | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | 반도체학술대회 | - |
| dc.relation.isPartOf | 반도체학술대회 | - |
| dc.citation.title | 반도체학술대회 | - |
| dc.citation.conferencePlace | 천안상록리조트 컨벤션센터 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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