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Quantum Dot Infrared Photodetectprs operating at mid- infrared range
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T06:59:02Z | - |
| dc.date.available | 2021-06-23T06:59:02Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2002-02-21 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/32321 | - |
| dc.description.abstract | We report a comparison between the mid-infrared absorption and the photocurrent response of InAs/GaAs self-axxembled quantum dots infrared photodetectors(QDIPs). The lateral QDIO operates by lateral transport of carriers between two top contacts,in which the AlGaAs barrier is used to be the modulation doped layer to provide a high mobility collection channel at the GaAs/AlGaAs interface. The maximum values for peak photocurrent is 235pA at 160K, which peaks at 4.66 The dark current exhibit an asymmetric profile versus the external bias. This asymmetry is correlated to the structural asymmetry of the quantum dot layers | - |
| dc.publisher | KAIST, 한국반도체산업협회 | - |
| dc.title | Quantum Dot Infrared Photodetectprs operating at mid- infrared range | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | 한국반도체학술대회 | - |
| dc.relation.isPartOf | 한국반도체학술대회 | - |
| dc.citation.title | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 천안상록리조트 컨벤션센터 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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