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Power 응용을 위한 AlGAN/GAN HFET의 대신호 모델링
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T06:59:03Z | - |
| dc.date.available | 2021-06-23T06:59:03Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2002-02-21 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/32322 | - |
| dc.description.abstract | A bias-dependent large signal model is presented to characterize AlGaN/GaN HFET on sapphire by pulsed meassurements. Two nonlinear current sources and few additional parameters are used to model bias-dependence of the drain current. Results show that the method discussed in this letter can be applied to model the large signal behavior of AlGaN/GaN HFET's from DC to RF at any bias points | - |
| dc.publisher | KAIST, 한국반도체산업협회 | - |
| dc.title | Power 응용을 위한 AlGAN/GAN HFET의 대신호 모델링 | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | 한국반도체학술대회 | - |
| dc.relation.isPartOf | 한국반도체학술대회 | - |
| dc.citation.title | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 천안상록리조트 컨벤션센터 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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