Engineering Asymmetric Charge Injection/Extraction to Optimize Organic Transistor Performances
DC Field | Value | Language |
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dc.contributor.author | Rockson, Tonnah Kwesi | - |
dc.contributor.author | Baek, Seolhee | - |
dc.contributor.author | Jang, Hayeong | - |
dc.contributor.author | Choi, Giheon | - |
dc.contributor.author | Oh, Seungtaek | - |
dc.contributor.author | Kim, Jaehan | - |
dc.contributor.author | Cho, Hyewon | - |
dc.contributor.author | Kim, Se Hyun | - |
dc.contributor.author | Lee, Hwa Sung | - |
dc.date.accessioned | 2021-06-22T10:21:46Z | - |
dc.date.available | 2021-06-22T10:21:46Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3420 | - |
dc.description.abstract | The introduction of an appropriate functionality on the electrode/active layer interface has been found to be an efficient methodology to enhance the electrical performances of organic field-effect transistors (OFETs). Herein, we efficiently optimized the charge injection/extraction characteristics of source/drain (S/D) electrodes by applying an asymmetric functionalization at each individual electrode/organic semiconductor (OSC) interface. To further clarify the functionalizing effects of the electrode/OSC interface, we systematically designed five different OFETs: one with pristine S/D electrodes (denoted as pristine S/D) and the remaining ones made by symmetrically or asymmetrically functionalizing the S/D electrodes with up to two different self-assembled monolayers (SAMs) based on thiolated molecules, the strongly electron-donating thiophenol (TP) and electron-withdrawing 2,3,4,5-pentafluorobenzenethiol (PFBT). Both the S and D electrodes were functionalized with TP (denoted as TP-S/D) in one of the two symmetric cases and with PFBT in the other (PFBT-S/D). In each of the two asymmetric cases, one of the S/D electrodes was functionalized with TP and the other with PFBT (to produce PFBT-S/TP-D and TP-S/PFBT-D OFETs). The vapor-deposited p-type dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene was used as the OSC active layer. The PFBT-S/TP-D case exhibited a field-effect mobility (mu(FET)) of 0.86 +/- 0.23 cm(2) V-1 s(-1), about three times better than that of the pristine S/D case (0.31 +/- 0.12 cm(2) V-1 s(-1)). On the other hand, the mu(FET) of the TP-S/PFBT-D case (0.18 +/- 0.10 cm(2) V-1 s(-1)) was significantly lower than that of the pristine case and even lower than those of the TP-S/D (0.23 +/- 0.07 cm(2) V-1 s(-1)) and PFBT-S/D (0.58 +/- 0.19 cm(2) V-1 s(-1)) cases. These results were clearly correlated with the additional hole density, surface potential, and effective work function. In addition, the contact resistance (R-C) for the asymmetric PFBT-S/TP-D case was 10-fold less than that for the TP-S/PFBT-D case and more than five times lower than that for the pristine case. The results contribute a meaningful step forward in improving the electrical performances of various organic electronics such as OFETs, inverters, solar cells, and sensors. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Chemical Society | - |
dc.title | Engineering Asymmetric Charge Injection/Extraction to Optimize Organic Transistor Performances | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Hwa Sung | - |
dc.identifier.doi | 10.1021/acsami.9b01658 | - |
dc.identifier.scopusid | 2-s2.0-85062863755 | - |
dc.identifier.wosid | 000461538000050 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials and Interfaces, v.11, no.10, pp.10108 - 10117 | - |
dc.relation.isPartOf | ACS Applied Materials and Interfaces | - |
dc.citation.title | ACS Applied Materials and Interfaces | - |
dc.citation.volume | 11 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 10108 | - |
dc.citation.endPage | 10117 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | CONTACT RESISTANCE | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ELECTRODE | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordAuthor | charge injection | - |
dc.subject.keywordAuthor | charge extraction | - |
dc.subject.keywordAuthor | asymmetric functionalization | - |
dc.subject.keywordAuthor | self-assembled monolayer | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.9b01658 | - |
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