Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Lee, Moonsang | - |
dc.contributor.author | Lee, Hyun Uk | - |
dc.contributor.author | Song, Keun Man | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.date.accessioned | 2021-06-22T10:26:03Z | - |
dc.date.available | 2021-06-22T10:26:03Z | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3553 | - |
dc.description.abstract | The nature of reverse leakage current characteristics in InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN crystals detached from a Si substrate is investigated for the first time, using temperature-dependent current-voltage (T-I-V) measurement. It is found that the Si-based homoepitaxial InGaN/GaN LEDs exhibit a significant suppression of the reverse leakage current without any additional processes. Their conduction mechanism can be divided into variable-range hopping and nearest neighbor hopping (NNH) around 360 K, which is enhanced by Poole-Frenkel emission. The analysis of T-I-V curves of the homoepitaxial LEDs yields an activation energy of carriers of 35 meV at -10 V, about 50% higher than that of the conventional ones (E-a = 21 meV at -10 V). This suggests that our homoepitaxial InGaN/GaN LEDs bears the high activation energy as well as low threading dislocation density (about 1 x 10(6)/cm(2)), effectively suppressing the reverse leakage current. We expect that this study will shed a light on the high reliability and carrier tunneling characteristics of the homoepitaxial InGaN/GaN blue LEDs produced from a Si substrate and also envision a promising future for their successful adoption by LED community via cost-effective homoepitaxial fabrication of LEDs. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1038/s41598-019-38664-x | - |
dc.identifier.scopusid | 2-s2.0-85060925465 | - |
dc.identifier.wosid | 000457128700047 | - |
dc.identifier.bibliographicCitation | Scientific Reports, v.9, no.1, pp 1 - 6 | - |
dc.citation.title | Scientific Reports | - |
dc.citation.volume | 9 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | SUPPRESSION | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordPlus | LEDS | - |
dc.identifier.url | https://www.nature.com/articles/s41598-019-38664-x | - |
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