The Characteristics of In0.52Al0.48As/In0.53Ga0.47As Heterojunction BipolarTransistors illuminated by Laser

오재응

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The Characteristics of In0.52Al0.48As/In0.53Ga0.47As Heterojunction BipolarTransistors illuminated by Laser

Authors: 오재응

Issue Date: 1-Feb-1997

Publisher: 경주 교육문화회관

Citation: 제 4회 반도체 학술대회 논문집오재응외2명

URI: https://scholarworks.bwise.kr/erica/handle/2020.sw.erica/36086

Conference Name: 제 4회 반도체 학술대회 논문집오재응외2명

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Appears in Collections: COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 2. Conference Papers

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